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HiPerFET TM IXFB80N50Q2
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, Low Q g , Low Intrinsic R G
High dV/dt, Low t rr
V DSS =
I D25 =
R DS(on) ≤
t rr ≤
PLUS264 TM ( IXFB)
500V
80A
60m Ω
250ns
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
500
500
V
V
V GSS
V GSM
I D25
I DRMS
I DM
Continuous
Transient
T C = 25 ° C
External lead limited
T C = 25 ° C, pulse width limited by T JM
± 30
± 40
80
75
320
V
V
A
A
A
G
D
G = Gate
S
( TAB )
D = Drain
I AR
E AR
E AS
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
80
60
5.0
A
mJ
J
S = Source
Features
TAB = Drain
dV/dt
P D
T J
T JM
T stg
T L
T SOLD
F C
Weight
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
1.6 mm (0.063 in.) from case for 10s
Plastic body for 10s
Mounting force
20
960
-55 ... +150
150
-55 ... +150
300
260
30...120/6.7...27
10
V/ns
W
° C
° C
° C
° C
° C
N / lbs
g
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
Advantages
PLUS 264 TM package for clip or spring
BV DSS
V GS(th)
I GSS
V GS = 0 V, I D = 1mA
V DS = V GS , I D = 8mA
V GS = ± 30 V, V DS = 0V
500
3.0
5.5
± 200
V
V
nA
mounting
Space savings
High power density
I DSS
V DS = V DSS
V GS = 0V
T J = 125 ° C
100 μ A
5 mA
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
60 m Ω
? 2007 IXYS CORPORATION, All rights reserved
DS98958F(07/07)
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